Mrs. Lijuan Wu is a distinguished researcher specializing in power semiconductor devices and power integrated circuits, with a strong focus on the design, simulation, and optimization of SiC and GaN-based electronic components such as MOSFETs, HEMTs, and IGBTs. Her work emphasizes enhancing energy efficiency, switching controllability, and device reliability for next-generation semiconductor applications. With 69 research publications, 317 citations, and an h-index of 9, she has made impactful contributions through innovative designs, including Double-RESURF SiC MOSFETs and self-clamped P-shield trench MOSFETs. Mrs. Wu has successfully led 10 funded research projects, including one supported by the National Natural Science Foundation of China, and multiple provincial and industry collaborations, bridging theoretical modeling with applied semiconductor technology. She has published 24 first-author papers in high-impact journals such as IEEE Transactions on Electron Devices and Microelectronics Journal, and authored the national monograph Optimization Technology for Charge Field in Heterogeneous Voltage-Resistant Layers of Power Semiconductors. Additionally, she has filed 12 invention patents, with 2 granted, showcasing her commitment to innovation and technology transfer. Her academic influence extends to mentoring graduate research, guiding numerous students in publishing high-quality papers, and contributing to the advancement of semiconductor device education and research. Through her sustained scholarly excellence and leadership in semiconductor innovation, Mrs. Wu continues to make significant strides toward energy-efficient and reliable power electronics.
Profile: Scopus
Featured Publications
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Wu, L., et al. (2025). Simulation study of a 1200V 4H–SiC lateral MOSFETs with Double-RESURFs technology for reducing saturation current. Micro and Nanostructures.
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Wu, L., et al. (2025). The ESD robustness of Schottky-gate p-GaN HEMT under different states. IEEE Transactions on Electron Devices.
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Wu, L., et al. (2024). Self-clamped P-shield 4H-SiC trench MOSFET for low turn-off loss and suppress switching oscillation. Microelectronics Journal, 142, 106901.
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Wu, L., et al. (2024). A novel 4H–SiC IGBT with double gate PMOS for improving the switch controllability and FBSOA. Microelectronics Journal, 141, 106820.
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Wu, L., et al. (2024). Study on the hydrogen effect and interface/border traps of a depletion-mode AlGaN/GaN high-electron-mobility transistor with a SiNx gate dielectric at different temperatures. Micromachines, 15(2), 301.